Dishant Sangani

Dishant Sangani
Phd student
dishant.sangani@esat.kuleuven.be
Or meet the full MICAS team

Publications

Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology D Sangani, Javier Diaz-Fortuny, E Bury, J Franco, B Kaczer, and Georges Gielen · Article · Jun 21. 2023 IEEE Transactions On Device And Materials Reliability; 2023; Vol. 23; iss. 3; pp.
Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, and Ben Kaczer · Conference Proceeding · Jan 1. 2023 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS; 2023; pp.
The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology D Sangani, J Diaz-Fortuny, E Bury, B Kaczer, and G Gielen · Conference Proceeding · Jan 1. 2023 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS; 2023; pp.
Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions D Sangani, J Diaz-Fortuny, E Bury, B Kaczer, and G Gielen · Conference Proceeding · Jan 1. 2022 2022 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, IIRW; 2022; pp.