Chip gallery

MICAS is proud to present its Chip Gallery, an overview of the chips that have been developed by our team since 2011.
Search or filter the chips by research domain or year.
53 resultaten
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16 ch. , 11 V-tolerant, high-density neurostimulator using Digital Time Domain Calibration
Application: Neurostimulator for Visual Cortex stimulation
Technology: 65nm CMOS
Published: BioCAS 2022, IEEE Biomedical Circuits and Systems Conference
Publication Year: 2022
Paper: An 11 V-tolerant, high-density neurostimulator using time-domain calibration in 65 nm CMOS
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A 125 GHz Dielectric Waveguide ASK Receiver
Application: Dielectric waveguide communication
Technology: 28nm CMOS
Published: ESSCIRC 2021
Publication Year: 2021
Paper: A PAM4 Dielectric Waveguide Link in 28 nm CMOS
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Self-Mixing Transistors at 0.56 and 1.06 THz
Application: THz imaging
Technology: 65nm CMOS
Published: IRMMW-THz 2021
Publication Year: 2021
Paper: Performance Comparison of Self-Mixing Transistors at 0.56 and 1.06 THz in 65nm CMOS
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A 4x4 Harmonic Injection-Locked Receiver Array
Application: THz imaging
Technology: 28nm CMOS
Published: ISSCC 2023
Publication Year: 2023
Paper: A 4×4 607GHz Harmonic Injection-Locked Receiver Array Achieving 4.4pW/√Hz NEP in 28nm CMOS
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605 GHz Harmonic Injection-Locked Receiver
Application: THz imaging
Technology: 28nm CMOS
Published: ISSCC 2021
Publication Year: 2021
Paper: A 605GHz 0.84mW Harmonic Injection-Locked Receiver Achieving 2.3pW/√Hz NEP in 28nm CMOS
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TinyVers: A Tiny Versatile System-on-Chip With State-Retentive eMRAM for ML Inference at the Extreme Edge
Application: Machine Learning
Technology: GF 22FDX
Published: VLSI 2022 and JSSC 2023
Publication Year: 2022
Paper: TinyVers: A Tiny Versatile System-on-Chip With State-Retentive eMRAM for ML Inference at the Extreme Edge
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A 135GHz Direct-Digital Demodulation 16-QAM Receiver
Application: High-speed communication
Technology: 28nm CMOS
Published: ESSCIRC 2022
Publication Year: 2022
Paper:

ESSCIRC
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A 135GHz Direct-Digital Modulation 16-QAM Transmitter
Application: High-speed communication
Technology: 28nm CMOS
Published: ESSCIRC 2022
Publication Year: 2022
Paper:

ESSCIRC
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A 390GHz High-Speed BPOOK Transmitter
Application: High-speed communication
Technology: 28nm CMOS
Published: RFIC 2020
Publication Year: 2020
Paper: RFIC
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Wide supply range 0.17PJ operation multiply-accumulate unit
Application: Low-power microcontroller for e.g. the internet-of-things
Technology: 28nm UTBB FD-SOI
Published: ASSCC’14
Publication Year: 2014
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HYDRAUGEL MICROLENS WITH BUILT-IN POLYMER WAVE GUIDE AND FIBER CLAMP
Application: Liquid analysis
Technology: MICAS MEMS fab
Published: Transducers ’13
Publication Year: 2013
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ULTRA-FINE FLEXIBLE NEURAL ELECTRODE
Application: Brain measurements
Technology: MICAS MEMS fab
Published: Transducers ’13
Publication Year: 2013
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RING OSCILLATOR BASED CAPACITIVE SENSOR INTERFACE
Application: Low-power wireless sensor nodes
Technology: 130nm CMOS
Published: A-SSCC‘13
Publication Year: 2013
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MM-PRECISE INDOOR RANGING RECEIVER
Application: High-accuracy distance measurements
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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WIDE VOLTAGE RANGE SWITCHEDCAP DC-DC CONVERTER
Application: Powering chips directly from a battery
Technology: 90nm CMOS
Published: ESSCIRC’14
Publication Year: 2014
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HIGHLY-TUNABLE E-BAND QUADRATURE VCO
Application: High bandwidth communication
Technology: 28nm bulk CMOS
Published: RFIC‘15
Publication Year: 2015
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MM-WAVE TRANSFORMER-BASED DOHERTY POWER AMPLIFIERS
Application: High-speed communication for 5G
Technology: 40nm CMOS
Published: TMTT’15
Publication Year: 2015
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TRANSFORMER-COUPLED TRUE-POWER DETECTOR
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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120GHZ 10GBPS TRANSMITTER
Application: Wireless communication
Technology: 65nm CMOS
Published: ISSCC’11
Publication Year: 2011
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60GHZ OUTPHASING PA
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’12
Publication Year: 2012
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FAST HIGH DYNAMIC RANGE CMOS IMAGE SENSOR
Application: High frame-rate cameras
Technology: Towerjazz 0.18um
Published: TED’13, JSensor’14
Publication Year: 2013
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MIXED-SIGNAL ACOUSTIC EVENT DETECTOR
Application: Voice activity detection
Technology: 90nm CMOS
Published: ISSCC’15, JSSC’15
Publication Year: 2015
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ENVISION: PRECISION-, VOLTAGE- AND FREQUENCY SCALABLE NEURAL NETWORK PROCESSING
Application: Convolutional Neural Network Acceleration
Technology: 28nm UTBB FD-SOI
Published: ISSCC’17
Publication Year: 2017
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ARRAY OF 54432 TRANSISTORS SELECTABLE THROUGH TRANSMISSION GATES
Application: Characterisation of variability, reliability and noise
Technology: 28nm (HKMG bulk)
Published: IIRW'15
Publication Year: 2015
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A 61.4 TO 88.9GHZ BANDWIDTH 7.3 TO 9.1DB NOISE FIGURE SLIDING-IF RECEIVER
Application: E-Band communications
Technology: 28nm CMOS
Published: JSSC'17
Publication Year: 2017
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A 68.1 TO 96.4GHZ VARIABLE GAIN LOW NOISE AMPLIFIER
Application: E-Band communications
Technology: 28nm CMOS
Published: ISSCC'16 and JSSC'17
Publication Year: 2016
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A 83.7 TO 88.7 GHZ TRANSFORMER-COUPLED QUADRATURE VCO
Application: E-Band communications
Technology: 40nm CMOS
Published: ESSCIRC'14
Publication Year: 2014
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120GHZ GIGABIT FSK RECEIVER WITH ON-CHIP ANTENNA
Application: Plastic waveguide communication for automotive
Technology: 40nm CMOS
Published: JSSC'16
Publication Year: 2016
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AN ACTIVE 120GHZ PHASE SHIFTER
Application: Phase shifter for optimization of FSK quadrature demodulation
Technology: 28nm bulk CMOS
Published: IMS’17
Publication Year: 2017
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5.4V LINE DRIVER IN 40NM BULK CMOS WITH 21.7DBM MAXIMUM OUTPUT POWER
Application: Broadband wireline communication
Technology: 40nm bulk CMOS
Published: ESSCIRC’16
Publication Year: 2016
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HIGHLY-EFFICIENT SWITCHED-CAPACITOR DC-DC CONVERTER USING SCALABLE PARASITIC CHARGE REDISTRIBUTION
Application: Low-power electronics, internet-of-things, wearables
Technology: 40nm CMOS
Published: ISSCC'16 (Best paper award), JSSCC'16, ESSCIRC'16, JSSC'17
Publication Year: 2016
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IMPLANTABLE LOGGING INTERNAL BLADDER PRESSURE
Application: Bladder pill for biomedical monitoring
Technology: discretes
Published: Sensors&Actuators ’10
Publication Year: 2010
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A NEAR-THRESHOLD JPEG ENCODER
Application: Image processing
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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MONOLITHIC AC-DC CONVERTER
Application: Powering chips directly from the mains supply
Technology: 0.35μm I3T25
Published: ESSCIRC’12, JSSC’13
Publication Year: 2012
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40MHZ 10-BIT VCO-BASED DELTA-SIGMA ADC
Application: Wireless and wireline communications
Technology: 40nm CMOS
Published: ESSCIRC’13, JSSC’15
Publication Year: 2013
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BBPLL-BASED CAPACITIVE CNT SENSOR INTERFACE
Application: Future sensors for lowpower applications
Technology: Stanford 1μm CNT
Published: ISSCC’13, JSSC’13, DAC’13
Publication Year: 2013
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95.4% EFFICIENCY SWITCHED-CAP DC-DC CONVERTER
Application: Powering chips directly from the mains supply
Technology: 0.14um SOI
Published: ISSCC’15, JSSC’15
Publication Year: 2015
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120GHZ GIGABIT FSK RECEIVER
Application: Plastic waveguide communication for automotive
Technology: 40nm CMOS
Published: ISSCC’15
Publication Year: 2015
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0.61THZ TRANSMITTER
Application: Imaging for security, water content detector, etc.
Technology: 28nm CMOS
Published: ASSCC’15
Publication Year: 2015
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TRANSFORMER-BASED DOHERTY LTE PA
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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PUSH-PULL COMPLEMENTARY MM-WAVE POWER AMPLIFIER
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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E-BAND PA WITH 21DBM OUTPUT POWER
Application: Wireless communication and radar
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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ENDOCARDIAL AND EPICARDIAL ACCELEROMETER
Application: In-vivo monitoring of heart acceleration signal
Technology: discretes
Published: Biomedical Microdevices '17
Publication Year: 2017
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WIDE INPUT VOLTAGE RANGE DC-DC CONVERTER
Application: Flexible on-chip power delivery
Technology: 90nm CMOS
Published: ASSCC’15
Publication Year: 2015
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PRECISION-SCALABLE NEURAL NETWORK PROCESSING
Application: Convolutional Neural Network Acceleration
Technology: 40nm CMOS
Published: VLSI'16 and JSSC'17
Publication Year: 2016
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TWO ARRAYS OF 18144 TRANSISTORS EACH FOR ANALYZING RTN NOISE ON-CHIP
Application: Characterisation of variability, reliability and noise
Technology: 28nm (HKMG bulk)
Published: VLSI'17
Publication Year: 2017
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A 29 TO 57GHZ AM-PM COMPENSATED CLASS-AB POWER AMPLIFIER
Application: 5G phased arrays
Technology: 28nm CMOS
Published: RFIC'17
Publication Year: 2017
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A 25 TO 102 GHZ 2.81 TO 5.64MW INDUCTOR-LESS DIVIDE-BY-4
Application: E-Band communications
Technology: 28nm CMOS
Published: ASSCC'15
Publication Year: 2015
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120GHZ MULTI-GIGABIT FSK LINK WITH LOW-LOSS COUPLER
Application: Plastic waveguide communication for automotive
Technology: 40nm CMOS
Published: ESSCIRC’16
Publication Year: 2016
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0.49THZ RADIATING SOURCE
Application: IMS’17
Technology: 40nm CMOS
Published: IMS’17
Publication Year: 2017
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HIGH-EFFICIENCY AND LINEAR 28GHZ POWER AMPLIFIER
Application: Part of phased array design for 5G beamforming application
Technology: 40nm CMOS
Published: RFIC’17
Publication Year: 2017
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HIGH-EFFICIENCY, HIGH-POWER-DENSITY SWITCHED-CAPACITOR DC-DC CONVERTER USING SOFT CHARGING TECHNIQUES
Application: Mobile applications
Technology: 28nm CMOS
Published: ISSCC'17
Publication Year: 2017
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SCHOTTKY AND PN PHOTODIODES
Application: Fully integrated CMOS optical receivers suited for the long-haul 1310nm and 1550nm communication bands
Technology: 40nm CMOS
Published: OFC'17
Publication Year: 2017