Chip gallery

MICAS is proud to present its Chip Gallery, an overview of the chips that have been developed by our team since 2011.
Search or filter the chips by research domain or year.
95 resultaten
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280 GHz ASK Receiver
Application: Non-coherent short range communication
Technology: 16-nm FinFET
Published: IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Publication Year: 2024
Paper: Non-Coherent TX-RX Chipsets for J-band Communication in 16-nm FinFET CMOS
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280 GHz ASK Transmitter
Application: Non-coherent short range communication
Technology: 16-nm FinFET
Published: IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Publication Year: 2024
Paper: Non-Coherent TX-RX Chipsets for J-band Communication in 16-nm FinFET CMOS
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A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI
Application: 6G mm-wave communication
Technology: 22nm FD-SOI
Published: 2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Publication Year: 2024
Paper: A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI
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16nm Digital-In-Memory-Compute SoC for edge CNN inference
Application: Edge CNN inference
Technology: 16nm FinFET
Published: ESSERC 2024
Publication Year: 2024
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AIA: A 16nm Multicore SoC for Approximate Inference Acceleration Exploiting Non-normalized Knuth-Yao Sampling and Inter-Core Register Sharing
Application: Machine learning
Technology: Intel 16nm
Published: ESSERC
Publication Year: 2024
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Boreas: a test chip for cryo-CMOS design-oriented scalable compact modeling
Application: Cryogenic CMOS characterization and modeling
Technology: 65-nm LP CMOS
Published: IEEE Journal of the Electron Devices Society
Publication Year: 2024
Paper: Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology
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Optical Injection-Locked Oscillator with Integrated Schottky Photodiode in 65 nm CMOS
Application: Clock synchronization
Technology: 65 nm CMOS
Published: ESSERC
Publication Year: 2024
Paper: Optical Injection-Locked Oscillator With Integrated Schottky Photodiode in 65 nm CMOS
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Characterization of Schottky Photodiodes in 65 nm bulk CMOS for 1310 nm Optical Receivers
Application: Integrated optical devices in CMOS
Technology: 65 nm CMOS
Published: IEEE Photonics Conference (IPC)
Publication Year: 2024
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A>70dB Digital Readout Circuit Implemented in 65nm CMOS for 10μm SWIR InGaAs Pixels
Application: SWIR Readout Circuit
Technology: TSMC 65nm
Published: IEEE Sensors Conference
Publication Year: 2024
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A Dual-Band PAM4 Dielectric Waveguide Receiver
Application: Dielectric waveguide communication
Technology: 28nm CMOS
Published: IEEE Journal of Solid-State Circuits
Publication Year: 2024
Paper: Design of a Noncoherent 100-Gb/s 3-m Dual-Band PAM-4 Dielectric Waveguide Link in 28-nm CMOS
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A Dual-Band PAM4 Dielectric Waveguide Transmitter
Application: Dielectric waveguide communication
Technology: 28nm CMOS
Published: IEEE Journal of Solid-State Circuits
Publication Year: 2024
Paper: Design of a Noncoherent 100-Gb/s 3-m Dual-Band PAM-4 Dielectric Waveguide Link in 28-nm CMOS
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An Envelope-Detectable Single-Sideband Dielectric Waveguide Receiver
Application: Dielectric waveguide communication
Technology: 22nm FDSOI
Published: European Solid-State Electronics Research Conference (ESSERC)
Publication Year: 2024
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A 4x4 Harmonic Injection-Locked Receiver Array
Application: THz imaging
Technology: 28nm CMOS
Published: ISSCC 2023
Publication Year: 2023
Paper: A 4×4 607GHz Harmonic Injection-Locked Receiver Array Achieving 4.4pW/√Hz NEP in 28nm CMOS
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A D-band 20.4 dBm OP1dB Transformer-Based Power Amplifier With 23.6% PAE
Application: High-speed communication
Technology: 250-nm InP DHBT
Published: RFIC 2023
Publication Year: 2023
Paper: A D-band 20.4 dBm OP1dB Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology
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Fully Integrated 400 V-to-12 V DC-DC Converter in High-Voltage CMOS
Application: Battery management in electric vehicles, LED drivers, and IoT/smart home from the AC mains
Technology: XT018
Published: IEEE Journal of Solid-State Circuits
Publication Year: 2023
Paper: Fully Integrating a 400 V-to-12 V DC-DC Converter in High-Voltage CMOS
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A Fully Integrated 230 Vrms-to-12 Vdc AC-DC Converter Achieving 9 mW/mm²
Application: Internet of Things (IoT), home automation, grid infrastructure, and LED drivers
Technology: XT018
Published: IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Publication Year: 2023
Paper: A Fully Integrated 230 VRMS-to-12 VDC AC-DC Converter Achieving 9 mW/mm2
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A 10 GHz Quadruple-Tail Comparator with Double Feedforward Paths and Minimal Delay Slope in 28 nm CMOS
Application: High-speed ADCs, e.g., SAR ADCs
Technology: TSMC 28 nm CMOS
Published: IEEE 49th European Solid State Circuits Conference (ESSCIRC)
Publication Year: 2023
Paper: A 10 GHz Quadruple-Tail Comparator with Double Feedforward Paths and Minimal Delay Slope in 28 nm CMOS
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A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT
Application: THz Imaging
Technology: 250-nm InP DHBT
Published: BCICTS
Publication Year: 2023
Paper: A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT
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128KB high density digital in memory compute macro in 16nm FF
Application: Digital in memory compute for AI applications
Technology: 16nm FF, TSMC
Published: ESSCIRC 2023
Publication Year: 2023
Paper: A 16nm 128kB high-density fully digital In Memory Compute macro with reverse SRAM pre-charge achieving 0.36TOPs/mm2, 256kB/mm2 and 23. 8TOPs/W
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Low power variability resilient and energy efficient design
Application: Low-power digital circuits
Technology: 22nm CMOS
Published: Ieee Transactions On Very Large Scale Integration (Vlsi) Systems
Publication Year: 2023
Paper: Automated In-Situ Monitoring for Variability-Resilient and Energy-Efficient Digital Circuits Demonstrated on a Viterbi Decoder in 22-nm CMOS
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Transformer-Based mm-Wave Low-Loss Active Isolator in 22nm FD-SOI
Application: Antenna Transceiver Interface
Technology: 22nm FDSOI
Published: 18th European Microwave Integrated Circuits Conference (EuMIC)
Publication Year: 2023
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BRUTUS: 256 kb memory macro for biomedical recording applications in 22nm FD-SOI
Application: Ultra low leakage power SRAM in a RISC-V microcontroller
Technology: 22nm FD-SOI
Published: Transactions on Circuits and Systems I: Regular papers
Publication Year: 2023
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An End-to-End Dual ASIC OFDM Transceiver for Ultrasound In-Body Communication
Application: Ultrasound In-Body Communication
Technology: 65nm CMOS
Published: BioCAS 2022, TBioCAS 2023
Publication Year: 2023
Paper: An End-to-End Dual ASIC OFDM Transceiver for Ultrasound In-Body Communication
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A 135GHz Direct-Digital Modulation 16-QAM Transmitter
Application: High-speed communication
Technology: 28nm CMOS
Published: ESSCIRC 2022
Publication Year: 2022
Paper:

ESSCIRC
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A 135GHz Direct-Digital Demodulation 16-QAM Receiver
Application: High-speed communication
Technology: 28nm CMOS
Published: ESSCIRC 2022
Publication Year: 2022
Paper:

ESSCIRC
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TinyVers: A Tiny Versatile System-on-Chip With State-Retentive eMRAM for ML Inference at the Extreme Edge
Application: Machine Learning
Technology: GF 22FDX
Published: VLSI 2022 and JSSC 2023
Publication Year: 2022
Paper: TinyVers: A Tiny Versatile System-on-Chip With State-Retentive eMRAM for ML Inference at the Extreme Edge
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16 ch. , 11 V-tolerant, high-density neurostimulator using Digital Time Domain Calibration
Application: Neurostimulator for Visual Cortex stimulation
Technology: 65nm CMOS
Published: BioCAS 2022, IEEE Biomedical Circuits and Systems Conference
Publication Year: 2022
Paper: An 11 V-tolerant, high-density neurostimulator using time-domain calibration in 65 nm CMOS
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CAESAR: SRAM with stability monitoring and body bias tuning for biomedical applications
Application: Ultra low leakage SRAM using replica monitoring
Technology: 22nm FD-SOI
Published: Solid State Circuits Letters
Publication Year: 2022
Paper: SRAM with Stability Monitoring and Body Bias Tuning for Biomedical Applications
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DIANA: An End-to-End Hybrid DIgital and ANAlog Neural Network SoC for the Edge
Application: CNN accelerations
Technology: 22nm FDX
Published: ISSCC 2022, JSSC 2022
Publication Year: 2022
Paper: DIANA: An End-to-End Hybrid DIgital and ANAlog Neural Network SoC for the Edge
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Design Margin Reduction Through Completion Detection in a 28-nm Near-Threshold DSP Processor
Application: ultra low power DSP
Technology: 28 nm CMOS
Published: Journal of Solid State Circuits
Publication Year: 2022
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A 30 GHz Bandwidth Linear Front-End for Direct RF Receivers
Application: High-Speed ADC Front-End
Technology: 16 nm FinFET
Published: 2022 IEEE Symposium on VLSI Technology and Circuits
Publication Year: 2022
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D-band transmitter (a) and receiver (b) for a mm-wave gas spectroscopy system in 28nm CMOS
Application: Gas spectroscopy
Technology: 28nm CMOS
Published: ESSCIRC
Publication Year: 2022
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605 GHz Harmonic Injection-Locked Receiver
Application: THz imaging
Technology: 28nm CMOS
Published: ISSCC 2021
Publication Year: 2021
Paper: A 605GHz 0.84mW Harmonic Injection-Locked Receiver Achieving 2.3pW/√Hz NEP in 28nm CMOS
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Self-Mixing Transistors at 0.56 and 1.06 THz
Application: THz imaging
Technology: 65nm CMOS
Published: IRMMW-THz 2021
Publication Year: 2021
Paper: Performance Comparison of Self-Mixing Transistors at 0.56 and 1.06 THz in 65nm CMOS
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A 125 GHz Dielectric Waveguide ASK Receiver
Application: Dielectric waveguide communication
Technology: 28nm CMOS
Published: ESSCIRC 2021
Publication Year: 2021
Paper: A PAM4 Dielectric Waveguide Link in 28 nm CMOS
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Load modulated balanced power amplifier
Application: Wireless communication
Technology: 28nm CMOS
Published: ISSCC, JSSC
Publication Year: 2021
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A 190 GHZ GAIN-BOOSTED AMPLIFIER
Application: Communication/Imaging
Technology: 28nm CMOS
Published: TCASI 2021
Publication Year: 2021
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A 420 GHZ IQ RECEIVER
Application: THz Imaging
Technology: 40nm CMOS
Published: ISSCC 2021
Publication Year: 2021
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A 420 GHZ MULTIPLIER-BASED TRANSMITTER
Application: THz Imaging
Technology: 40nm CMOS
Published: ISSCC 2021
Publication Year: 2021
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A 110-150 GHz SIW-based Vivaldi coupler for PMF applications
Application: PMF
Technology: PCB - 4-layer Isola I-tera
Published: ESSIRC2021
Publication Year: 2021
Paper: A PAM4 Dielectric Waveguide Link in 28 nm CMOS
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DPU: DAG Processing Unit for Irregular Graphs
Application: probabilistic machine learning, sparse linear algebra, and robotic navigation
Technology: 28nm TSMC
Published: ISSCC 2021, JSSC 2022
Publication Year: 2021
Paper: DPU: DAG Processing Unit for Irregular Graphs With Precision-Scalable Posit Arithmetic in 28 nm
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DepFiN: A 12nm, 3.8TOPs depth-first CNN processor for high res. image processing
Application: High resolution image processing
Technology: 12nm GF
Published: VLSI 2021, JSSC 2022
Publication Year: 2021
Paper: DepFiN: A 12nm, 3.8TOPs depth-first CNN processor for high res. image processing
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A 125 GHz Dielectric Waveguide ASK Transmitter
Application: Dielectric waveguide communication
Technology: 28nm CMOS
Published: European Solid State Circuits Conference (ESSCIRC)
Publication Year: 2021
Paper: A PAM4 Dielectric Waveguide Link in 28 nm CMOS
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A 390GHz High-Speed BPOOK Transmitter
Application: High-speed communication
Technology: 28nm CMOS
Published: RFIC 2020
Publication Year: 2020
Paper: RFIC
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Vocell: A 65-nm Vocell: A 65-nm 10-µW Speech-Triggered Wake-Up SoC
Application: Keyword Spotting and Speaker Verification
Technology: 65nm CMOS
Published: VLSI 2019, JSSC 2020
Publication Year: 2020
Paper: Vocell: A 65-nm Speech-Triggered Wake-Up SoC for 10-μW Keyword Spotting and Speaker Verification
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Completion Detection-Based Timing Error Detection and Correction in a Near-Threshold RISC-V Microprocessor
Application: ultra low power DSP
Technology: FDSOI 28 nm
Published: Journal of Solid State Circuits
Publication Year: 2020
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670 GHz oscillator radiator array in 40nm CMOS
Application: THz imaging and communications
Technology: 40nm CMOS
Published: ISSCC-2020 and JSSC-2021
Publication Year: 2020
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An E-band Fully-Integrated True Power Detector in 28nm CMOS
Application: mm-Wave power detector
Technology: 28nm CMOS
Published: RFIC
Publication Year: 2019
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A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAs
Application: Wireless communication
Technology: 0.15um GaAs
Published: BCICTS
Publication Year: 2019
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A 140 GHZ POWER AMPLIFIER
Application: Communication/Imaging
Technology: 40nm CMOS
Published: RFIC 2018
Publication Year: 2018
Laika: A 5uW programmable LSTM accelerator for always-on keyword spotting
Application: keyword spotting
Technology: 65nm TSMC
Published: ESSERC 2018, JSSC 2019
Publication Year: 2018
Paper: Laika: A 5uW programmable LSTM accelerator for always-on keyword spotting in 65nm CMOS
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SCHOTTKY AND PN PHOTODIODES
Application: Fully integrated CMOS optical receivers suited for the long-haul 1310nm and 1550nm communication bands
Technology: 40nm CMOS
Published: OFC'17
Publication Year: 2017
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HIGH-EFFICIENCY, HIGH-POWER-DENSITY SWITCHED-CAPACITOR DC-DC CONVERTER USING SOFT CHARGING TECHNIQUES
Application: Mobile applications
Technology: 28nm CMOS
Published: ISSCC'17
Publication Year: 2017
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HIGH-EFFICIENCY AND LINEAR 28GHZ POWER AMPLIFIER
Application: Part of phased array design for 5G beamforming application
Technology: 40nm CMOS
Published: RFIC’17
Publication Year: 2017
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0.49THZ RADIATING SOURCE
Application: IMS’17
Technology: 40nm CMOS
Published: IMS’17
Publication Year: 2017
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A 29 TO 57GHZ AM-PM COMPENSATED CLASS-AB POWER AMPLIFIER
Application: 5G phased arrays
Technology: 28nm CMOS
Published: RFIC'17
Publication Year: 2017
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TWO ARRAYS OF 18144 TRANSISTORS EACH FOR ANALYZING RTN NOISE ON-CHIP
Application: Characterisation of variability, reliability and noise
Technology: 28nm (HKMG bulk)
Published: VLSI'17
Publication Year: 2017
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ENDOCARDIAL AND EPICARDIAL ACCELEROMETER
Application: In-vivo monitoring of heart acceleration signal
Technology: discretes
Published: Biomedical Microdevices '17
Publication Year: 2017
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AN ACTIVE 120GHZ PHASE SHIFTER
Application: Phase shifter for optimization of FSK quadrature demodulation
Technology: 28nm bulk CMOS
Published: IMS’17
Publication Year: 2017
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A 61.4 TO 88.9GHZ BANDWIDTH 7.3 TO 9.1DB NOISE FIGURE SLIDING-IF RECEIVER
Application: E-Band communications
Technology: 28nm CMOS
Published: JSSC'17
Publication Year: 2017
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ENVISION: PRECISION-, VOLTAGE- AND FREQUENCY SCALABLE NEURAL NETWORK PROCESSING
Application: Convolutional Neural Network Acceleration
Technology: 28nm UTBB FD-SOI
Published: ISSCC’17
Publication Year: 2017
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120GHZ MULTI-GIGABIT FSK LINK WITH LOW-LOSS COUPLER
Application: Plastic waveguide communication for automotive
Technology: 40nm CMOS
Published: ESSCIRC’16
Publication Year: 2016
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PRECISION-SCALABLE NEURAL NETWORK PROCESSING
Application: Convolutional Neural Network Acceleration
Technology: 40nm CMOS
Published: VLSI'16 and JSSC'17
Publication Year: 2016
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HIGHLY-EFFICIENT SWITCHED-CAPACITOR DC-DC CONVERTER USING SCALABLE PARASITIC CHARGE REDISTRIBUTION
Application: Low-power electronics, internet-of-things, wearables
Technology: 40nm CMOS
Published: ISSCC'16 (Best paper award), JSSCC'16, ESSCIRC'16, JSSC'17
Publication Year: 2016
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5.4V LINE DRIVER IN 40NM BULK CMOS WITH 21.7DBM MAXIMUM OUTPUT POWER
Application: Broadband wireline communication
Technology: 40nm bulk CMOS
Published: ESSCIRC’16
Publication Year: 2016
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120GHZ GIGABIT FSK RECEIVER WITH ON-CHIP ANTENNA
Application: Plastic waveguide communication for automotive
Technology: 40nm CMOS
Published: JSSC'16
Publication Year: 2016
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A 68.1 TO 96.4GHZ VARIABLE GAIN LOW NOISE AMPLIFIER
Application: E-Band communications
Technology: 28nm CMOS
Published: ISSCC'16 and JSSC'17
Publication Year: 2016
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A 25 TO 102 GHZ 2.81 TO 5.64MW INDUCTOR-LESS DIVIDE-BY-4
Application: E-Band communications
Technology: 28nm CMOS
Published: ASSCC'15
Publication Year: 2015
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WIDE INPUT VOLTAGE RANGE DC-DC CONVERTER
Application: Flexible on-chip power delivery
Technology: 90nm CMOS
Published: ASSCC’15
Publication Year: 2015
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0.61THZ TRANSMITTER
Application: Imaging for security, water content detector, etc.
Technology: 28nm CMOS
Published: ASSCC’15
Publication Year: 2015
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120GHZ GIGABIT FSK RECEIVER
Application: Plastic waveguide communication for automotive
Technology: 40nm CMOS
Published: ISSCC’15
Publication Year: 2015
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95.4% EFFICIENCY SWITCHED-CAP DC-DC CONVERTER
Application: Powering chips directly from the mains supply
Technology: 0.14um SOI
Published: ISSCC’15, JSSC’15
Publication Year: 2015
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ARRAY OF 54432 TRANSISTORS SELECTABLE THROUGH TRANSMISSION GATES
Application: Characterisation of variability, reliability and noise
Technology: 28nm (HKMG bulk)
Published: IIRW'15
Publication Year: 2015
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MIXED-SIGNAL ACOUSTIC EVENT DETECTOR
Application: Voice activity detection
Technology: 90nm CMOS
Published: ISSCC’15, JSSC’15
Publication Year: 2015
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MM-WAVE TRANSFORMER-BASED DOHERTY POWER AMPLIFIERS
Application: High-speed communication for 5G
Technology: 40nm CMOS
Published: TMTT’15
Publication Year: 2015
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HIGHLY-TUNABLE E-BAND QUADRATURE VCO
Application: High bandwidth communication
Technology: 28nm bulk CMOS
Published: RFIC‘15
Publication Year: 2015
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E-BAND PA WITH 21DBM OUTPUT POWER
Application: Wireless communication and radar
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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PUSH-PULL COMPLEMENTARY MM-WAVE POWER AMPLIFIER
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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TRANSFORMER-BASED DOHERTY LTE PA
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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A NEAR-THRESHOLD JPEG ENCODER
Application: Image processing
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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A 83.7 TO 88.7 GHZ TRANSFORMER-COUPLED QUADRATURE VCO
Application: E-Band communications
Technology: 40nm CMOS
Published: ESSCIRC'14
Publication Year: 2014
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TRANSFORMER-COUPLED TRUE-POWER DETECTOR
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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WIDE VOLTAGE RANGE SWITCHEDCAP DC-DC CONVERTER
Application: Powering chips directly from a battery
Technology: 90nm CMOS
Published: ESSCIRC’14
Publication Year: 2014
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MM-PRECISE INDOOR RANGING RECEIVER
Application: High-accuracy distance measurements
Technology: 40nm CMOS
Published: ISSCC’14
Publication Year: 2014
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Wide supply range 0.17PJ operation multiply-accumulate unit
Application: Low-power microcontroller for e.g. the internet-of-things
Technology: 28nm UTBB FD-SOI
Published: ASSCC’14
Publication Year: 2014
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BBPLL-BASED CAPACITIVE CNT SENSOR INTERFACE
Application: Future sensors for lowpower applications
Technology: Stanford 1μm CNT
Published: ISSCC’13, JSSC’13, DAC’13
Publication Year: 2013
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40MHZ 10-BIT VCO-BASED DELTA-SIGMA ADC
Application: Wireless and wireline communications
Technology: 40nm CMOS
Published: ESSCIRC’13, JSSC’15
Publication Year: 2013
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FAST HIGH DYNAMIC RANGE CMOS IMAGE SENSOR
Application: High frame-rate cameras
Technology: Towerjazz 0.18um
Published: TED’13, JSensor’14
Publication Year: 2013
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RING OSCILLATOR BASED CAPACITIVE SENSOR INTERFACE
Application: Low-power wireless sensor nodes
Technology: 130nm CMOS
Published: A-SSCC‘13
Publication Year: 2013
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ULTRA-FINE FLEXIBLE NEURAL ELECTRODE
Application: Brain measurements
Technology: MICAS MEMS fab
Published: Transducers ’13
Publication Year: 2013
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HYDRAUGEL MICROLENS WITH BUILT-IN POLYMER WAVE GUIDE AND FIBER CLAMP
Application: Liquid analysis
Technology: MICAS MEMS fab
Published: Transducers ’13
Publication Year: 2013
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MONOLITHIC AC-DC CONVERTER
Application: Powering chips directly from the mains supply
Technology: 0.35μm I3T25
Published: ESSCIRC’12, JSSC’13
Publication Year: 2012
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60GHZ OUTPHASING PA
Application: Wireless communication
Technology: 40nm CMOS
Published: ISSCC’12
Publication Year: 2012
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120GHZ 10GBPS TRANSMITTER
Application: Wireless communication
Technology: 65nm CMOS
Published: ISSCC’11
Publication Year: 2011
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IMPLANTABLE LOGGING INTERNAL BLADDER PRESSURE
Application: Bladder pill for biomedical monitoring
Technology: discretes
Published: Sensors&Actuators ’10
Publication Year: 2010