David Maes

  • Research valorization
  • Technology transfer and spin-off creation
  • Focus on the broad field of nanotechnology

Career overview

David Maes was born in Bonheiden, Belgium, in 1973. In 1996 he received the degree of M.S. in Electrical Engineering (option Microelectronics) from the KU Leuven, Belgium. The subject of his Master thesis was substrate noise in mixed-mode ICs. He also obtained postgraduate degrees in Business Administration and Corporate Finance at the KU Leuven. He started his professional career at imec. From 1996 until 2005 he was Process Integration Engineer. In this job he was responsible for the development of specific process steps and modules, and their integration in CMOS processes, for several applications: chemical sensors, ferroelectric memories, infrared detectors and flash memories. From 2005 until 2006 he was Business Program Manager, where he worked on the valorization of imec’s research results towards the Flemish industry by setting up diverse collaborations with Flemish companies and networks. From 2007 until 2016 he was Venture Development Manager. His responsibilities were initiating, coordinating and guiding spin-off projects.

David joined MICAS in May 2017 as Research Valorization Manager, in the framework of the Industrial Research Fund (IOF) of the KU Leuven.

Publications

Closing the terahertz gap with compact, low-cost imagers David Maes · Text Resource · Jan 9. 2024 Bits&Chips; 2024
Zachte lading maakt spanningsomzetters driemaal efficiënter David Maes and Nicolas Butzen · Text Resource · Nov 1. 2018 Bits&Chips; 2018; iss. 7; pp. 18 - 19
Nokia Bell Labs en KU Leuven blazen koper nieuw leven in David Maes · Text Resource · May 1. 2018 Bits&Chips; 2018; iss. 3; pp. 49 - 49
Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures JG Lisoni, JA Johnson, L Goux, V Paraschiv, D Maes, H Van der Meeren, M Willegems, L Haspeslagh, DJ Wouters, C Caputa, R Zambrano, Ch Turquat, and Ch Muller · Article · Jan 1. 2007 Journal Of Applied Physics; 2007; Vol. 101; iss. 1; pp.
Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 mu m CMOS technology L Goux, D Maes, JG Lisoni, H Vander Meeren, V Paraschiv, L Haspeslagh, C Artoni, G Russo, R Zambrano, and DJ Wouters · Article · Oct 1. 2006 Microelectronic Engineering; 2006; Vol. 83; iss. 10; pp. 2027 - 2031
Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory DJ Wouters, D Maes, L Goux, JG Lisoni, V Paraschiv, JA Johnson, M Schwitters, J-L Everaert, W Boullart, M Schaekers, M Willegems, H Vander Meeren, L Haspeslagh, C Artoni, C Caputa, P Casella, G Corallo, G Russo, R Zambrano, H Monchoix, G Vecchio, and L Van Autryve · Article · Sep 1. 2006 Journal Of Applied Physics; 2006; Vol. 100; iss. 5; pp.
Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors L Goux, Z Xu, V Paraschiv, JG Lisoni, D Maes, L Haspeslagh, G Groeseneken, and DJ Wouters · Article · Jul 1. 2006 Solid-State Electronics; 2006; Vol. 50; iss. 7-8; pp. 1227 - 1233
Mechanical stability of ir electrodes used for stacked SrBi2Ta2O9 ferroelectric capacitors JG Lisoni, JA Johnson, JL Everaert, L Goux, H Vander Meeren, V Paraschiv, M Willegems, D Maes, L Haspeslagh, DJ Wouters, C Caputa, and R Zambrano · Conference Proceeding · Jan 1. 2006 INTEGRATED FERROELECTRICS; 2006; Vol. 81; iss. 1; pp. 37 - 45
Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectic capacitors Ludovic Goux, Zhen Xu, Vasile Paraschiv, Judit Lisoni, David Maes, Luc Haspeslagh, Guido Groeseneken, and Dirk Wouters · Article · Jan 1. 2006 Solid-State Electronics ; 2006; Vol. 50; iss. 07; pp. 1227 - 1234
Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors L Goux, JG Lisoni, M Schwitters, V Paraschiv, D Maes, L Haspeslagh, DJ Wouters, N Menou, C Turquat, V Madigou, C Muller, and R Zambrano · Article · Sep 1. 2005 Journal Of Applied Physics; 2005; Vol. 98; iss. 5; pp.
A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling L Goux, G Russo, N Menou, JG Lisoni, M Schwitters, V Paraschiv, D Maes, C Artoni, G Corallo, L Haspeslagh, DJ Wouters, R Zambrano, and C Muller · Article · Apr 1. 2005 IEEE Transactions On Electron Devices; 2005; Vol. 52; iss. 4; pp. 447 - 453
Influence of dry-etch patterning of top electrode and SrBi2Ta2O9 on the properties of ferroelectric capacitors L Goux, V Paraschiv, JG Lisoni, M Schwitters, D Maes, L Haspeslagh, DJ Wouters, P Casella, and R Zambrano · Article · Jan 1. 2005 Journal Of The Electrochemical Society; 2005; Vol. 152; iss. 12; pp. C865 - C869
Stress evolution in integrated SrBi2Ta2O9 ferroelectric layers JG Lisoni, K Wafer, JA Johnson, L Goux, M Schwitters, V Paraschiv, D Maes, L Haspeslagh, C Caputa, R Zambrano, and DJ Wouters · Conference Proceeding · Jan 1. 2004 FERROELECTRIC THIN FILMS XII; 2004; Vol. 784; pp. 3 - 8
Influence of top electrode deposition conditions on the reliability of integrated SBT ferroelectric capacitors Ludovic Goux, Zhen Xu, Vasile Paraschiv, M Schwitters, Judit Lisoni, David Maes, Luc Haspeslagh, Guido Groeseneken, R Zambrano, and Dirk Wouters · Other · Jan 1. 2004
Integration of MOCVD SBT stacked ferroelectric capacitors in a 0.35 mu m CMOS technology D Maes, JL Everaert, L Goux, JG Lisoni, V Paraschiv, M Schwitters, L Haspeslagh, DJ Wouters, C Artoni, C Caputa, P Casella, G Corallo, G Russo, R Zambrano, H Monchoix, and L van Autryve · Conference Proceeding · Jan 1. 2004 INTEGRATED FERROELECTRICS; 2004; Vol. 66; pp. 71 - 83
Spacers alternatives for INTEGRATION OF (3D) STACKED SBT FeCAPs JG Lisoni, J Johnson, JL Everaert, V Paraschiv, W Boullart, D Maes, L Haspeslagh, DJ Wouters, C Caputa, P Casella, R Zambrano, G Vecchio, H Monchoix, and L Van Autryve · Conference Proceeding · Jan 1. 2003 INTEGRATED FERROELECTRICS; 2003; Vol. 53; pp. 257 - 267
A CMOS multiparameter biochemical microsensor with temperature control and signal interfacing Erik Lauwers, J Suls, W Gumbrecht, D Maes, Georges Gielen, and Willy Sansen · Article · Dec 1. 2001 IEEE Journal Of Solid-State Circuits; 2001; Vol. 36; iss. 12; pp. 2030 - 2038
A CMOS Multi-Parameter Biochemical Microsensor with Temperature Control and Signal Interfacing Erik Lauwers, Jan Suls, Geert Van der Plas, Erik Peeters, W Gumbrecht, D Maes, F Van Steenkiste, Georges Gielen, and Willy Sansen · Article · Jan 1. 2001 IEEE International Solid-State Circuits Conference ; 2001; Vol. 452; pp. 244 - 245
Why CMOS-integraded transducers? A review A Witvrouw, F Van Steenkiste, Dominique Maes, L Haspeslagh, W Laureyn, P Van Gerwen, P De Moor, S Sedky, Chris Van Hoof, A De Vries, A De Caussemaeker, B Parmentier, and Kris Baert · Article · Jan 1. 2000 Microsystem Technologies; 2000; Vol. 6; iss. 5; pp. 192 - 199
A biochemical CMOS integrated multi-parameter microsensor Filip Van Steenkiste, David Maes, Kris Baert, Lou Hermans, Robert Mertens, Erik Lauwers, Johannes Suls, Georges Gielen, Willy Sansen, W Gumbrecht, P Arquint, and K Abraham · Conference Proceeding · Jan 1. 1999
CMOS-based sensors and actuators Filip Van Steenkiste, Dirk Maes, Luc Haspeslagh, Sherif Sedky, Peter Van Gerwen, Sonja van der Groen, and Kris Baert · Conference Proceeding · Jan 1. 1998 ELEVENTH ANNUAL IEEE INTERNATIONAL ASIC CONFERENCE - PROCEEDINGS; 1998; pp. 393 - 97